Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

In p-n-junction temperature sensors connected in the forwardbiased, dependence of built-in potential is important, while reverse biased sensors, it necessary to study and space-charge region width.For this case, as well for homogeneous gradient alloyed cases, widthare studied mathematical analysis presented these cases.Based on analysis, results are obtained cases where base doped at different concentrations with a or inhomogeneous distributions impurities. It known that conventional when main current transport mechanism determined by generation-recombination processes space charge region, width can affect linearity response curve sensor, desirable increase doping rate weaken effect, use p-n junction.